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HM530 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM530
Manufacturer	H&M Semiconductor
File Size	350.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM530-HMSemiconductor.pdf

HM530 Product details

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram +0.

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Published: Jul 1, 2025 |