HM50N08 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM50N08 N-Channel Enhancement Mode Power MOSFET .
The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

HM50N08 Datasheet Preview — Preview of HM50N08 PDF

Datasheet Specifications

Part number: HM50N08
Manufacturer: H&M Semiconductor
File Size: 441.27 KB
Datasheet: HM50N08-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology

HM50N08 Distributors

📁 Related Datasheet

HM50N06K HM50 HM50-xxx HM500 HM50256 HM50256CP

📌 All Tags

HM50N08 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM50N08-like datasheet