HM50N06D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM50N06D N-Channel Enhancement Mode Power MOSFET .
The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM50N06D
Manufacturer: H&M Semiconductor
File Size: 406.77 KB
Datasheet: HM50N06D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM50N06D Distributors

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HM50N06D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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