HM50N20 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM50N20
Manufacturer: H&M Semiconductor
File Size: 472.81 KB
Datasheet: HM50N20-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =200V,ID =50A RDS(ON) < 40mΩ @ VGS=10V (Typ:30mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

HM50N20 Distributors

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HM50N20 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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