HM50N10K N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM50N10K N-Channel Enhancement Mode Power MOSFET .
The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM50N10K
Manufacturer: H&M Semiconductor
File Size: 457.40 KB
Datasheet: HM50N10K-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID =50A RDS(ON) < 23mΩ @ VGS=10V (Typ:14mΩ) Schematic diagram
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS

HM50N10K Distributors

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HM50N10K N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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