HM3N80 Silicon N-Channel Power MOSFET

H&M Semiconductor

Description

HM3N80 Silicon N-Channel Power MOSFET General .
VDSS 800 HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃.

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Datasheet Specifications

Part number: HM3N80
Manufacturer: H&M Semiconductor
File Size: 950.67 KB
Datasheet: HM3N80-HMSemiconductor.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-

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HM3N80 Silicon N-Channel Power MOSFET H&M Semiconductor

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