HM3400E Datasheet - H&M Semiconductor

HM3400E N-Channel 30V MOSFET

The HM3400E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS * Power Management in Note book * Portable Equipment.

HM3400E Features

* RDS(ON)= 450 mΩ @VGS=4.5V

* RDS(ON)= 550 mΩ @VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding DSC N-Channel 3D 3400E G1 2S Marking and pin Assignment SOT-23 t

HM3400E-HMSemiconductor.pdf