HM3400D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3400D N-Channel Enhancement Mode Power MOSFET .
The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM3400D
Manufacturer: H&M Semiconductor
File Size: 393.24 KB
Datasheet: HM3400D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 32mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT-23-3L top view Package Marking And Ordering Information Device Marking Device Device Package 3400D HM3400D SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol

HM3400D Distributors

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HM3400D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3400D-like datasheet