HM3400DR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3400DR N-Channel Enhancement Mode Power MOSFET .
The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM3400DR
Manufacturer: H&M Semiconductor
File Size: 564.87 KB
Datasheet: HM3400DR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management DFN2X2-6L bottom view Package Marking And Ordering Information Device Marking Device Device Package HM3400DR HM3400DR DFN2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter

HM3400DR Distributors

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HM3400DR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3400DR-like datasheet