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HM2819D Dual P-Channel Enhancement Mode Power MOSFET

HM2819D Description

HM2819D Dual P-Channel Enhancement Mode Power MOSFET .
The HM2819D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2819D Features

* VDS = -40V,ID = -5.0A RDS(ON)

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Datasheet Details

Part number
HM2819D
Manufacturer
H&M Semiconductor
File Size
566.86 KB
Datasheet
HM2819D-HMSemiconductor.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

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Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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