Datasheet4U Logo Datasheet4U.com

HM2803D Dual P-Channel Enhancement Mode Power MOSFET

HM2803D Description

HM2803D Dual P-Channel Enhancement Mode Power MOSFET .
The HM2803D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2803D Features

* VDS = -20V,ID = -5.0A RDS(ON)

📥 Download Datasheet

Preview of HM2803D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM2803D
Manufacturer
H&M Semiconductor
File Size
599.96 KB
Datasheet
HM2803D-HMSemiconductor.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM28 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM28S - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM2007 - Speech recognition (HMC)
  • HM200WD1-100 - TFT LCD (BOE)
  • HM20N120AB - IGBT (H&M semi)
  • HM20N120T - IGBT (H&M semi)
  • HM20N120TB - IGBT (H&M semi)
  • HM20N50F - 500V N-Channel MOSFET (H&M semi)

📌 All Tags

Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM2803D-like datasheet