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HM2807D

The HM2807D is N-Channel Enhancement Mode Power MOSFET designed by H&M Semiconductor.

Product Overview

H&M Semiconductor

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HM2807D N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2807D

Datasheet Details

Part number	HM2807D
Manufacturer	H&M Semiconductor
File Size	479.91 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2807D-HMSemiconductor.pdf
Additional preview pages of the HM2807D datasheet.

Product details

Description

The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =100A RDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram HM2807D.

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Published: Jul 15, 2025 |