HM250N03A N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM250N03A N-Channel Enhancement Mode Power MOSFET .
The HM250N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM250N03A
Manufacturer: H&M Semiconductor
File Size: 1.12 MB
Datasheet: HM250N03A-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

HM250N03A Distributors

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HM250N03A N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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