HM25P03D P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

+03' P-Channel Enhancement Mode Power MOSFET .
The H03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: HM25P03D
Manufacturer: H&M Semiconductor
File Size: 449.88 KB
Datasheet: HM25P03D-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* V S = -30V,I = -25A D D RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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HM25P03D P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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