HM15N10K - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM15N10K
Manufacturer	H&M Semiconductor
File Size	600.37 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM15N10K-HMSemiconductor.pdf

The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =100V,ID =15A RDS(ON) < 90mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 100mΩ @ VGS=4.5V (Typ:80mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram HM15N10K.

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Published: Jul 25, 2025 |