GSMDK2314 Datasheet (Globaltech)

GSMDK2314, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDK2314 Features

* 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* Green Device Available

* SOT-89 package design Applications

* Notebook

* Load Switch

* Hand-Held Instrumen