GSMD25N15 Datasheet (Globaltech)

GSMD25N15, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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GSMD25N15 Features

* 150V, 25A, RDS(ON)=65mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guaranteed ±25V

* Green Device Available

* TO-252-2L package design Applications

* Notebook

* Load Switch

* LED Applications

* Li batte