GSMD0903 Datasheet (Globaltech)

GSMD0903, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMD0903 Features

* -100V, -25A, RDS(ON)=42mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* VGS guarantee ±25V

* Green Device Available

* TO-252-2L package design Applications

* Networking

* Load Switch

* LED applications Packages & Pi