GSMD18N20 Datasheet (Globaltech)

GSMD18N20, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMD18N20 Features

* 200V, 18A, RDS(ON)=140mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guaranteed ±25V

* Green Device Available

* TO-252-2L package Applications

* LED Backlight & Lighting

* UPS

* High Voltage Switching