GSMDEC2210V Datasheet (Globaltech) - Dual N-Channel MOSFET

GSMDEC2210V, Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

GSMDEC2210V Features

* 20V, 30A, RDS(ON)=12mΩ@VGS=10V

* Improved dv/dt capability

* ESD Protection Diode Embedded

* 100% EAS guaranteed

* Green Device Available

* DFN3X3-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd