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G18NP06Y - N and P Channel Enhancement Mode Power MOSFET

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G18NP06Y N and P Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G18NP06Y

Datasheet Details

Part number	G18NP06Y
Manufacturer	GOFORD
File Size	899.93 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G18NP06Y Datasheet
Additional preview pages of the G18NP06Y datasheet.

Product details

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

Features

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V) 60V 18A < 35mΩ < 45mΩ Schematic diagram D1/D2.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -10V).
RoHS Compliant -60V -18A < 45mΩ S1 G1 S2 G2 Marking and pin assignment.

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Published: Jul 30, 2025 |