G18P03S P-Channel Trench Power MOSFET

Description

GOFORD P-Channel Trench Power MOSFET General .
The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

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Datasheet Specifications

Part number: G18P03S
Manufacturer: GOFORD
File Size: 2.05 MB
Datasheet: G18P03S-GOFORD.pdf
Description: P-Channel Trench Power MOSFET

Features

* VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A
* High Power and current handing capability
* RoHS Compliant

G18P03S Distributors

📁 Related Datasheet

G18-3A30NA G185BGE-L01 G185HAN01.0 G185HAN01.1 G185HAN01.3 G185HAN01.4

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G18P03S P-Channel Trench Power MOSFET GOFORD

GOFORD G18P03S-like datasheet