G18P03, G18P03S P-Channel Trench Power MOSFET

Description

GOFORD P-Channel Trench Power MOSFET General .
The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

📥 Download Datasheet

G18P03 Datasheet Preview — This datasheet PDF includes multiple part numbers: G18P03, G18P03S. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: G18P03, G18P03S
Manufacturer: GOFORD
File Size: 2.05 MB
Datasheet: G18P03S-GOFORD.pdf
Description: P-Channel Trench Power MOSFET
Note: This datasheet PDF includes multiple part numbers: G18P03, G18P03S.
Please refer to the document for exact specifications by model.

Features

* VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A
* High Power and current handing capability
* RoHS Compliant

G18P03 Distributors

📁 Related Datasheet

G18-3A30NA G185BGE-L01 G185HAN01.0 G185HAN01.1 G185HAN01.3 G185HAN01.4

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G18P03S P-Channel Trench Power MOSFET GOFORD

GOFORD G18P03-like datasheet