MRF6S27015NR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S27015NR1, RF Power Field Effect Transistors

100 nF Chip Capacitor 4.7 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ,1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKWS 600B4R7BT250XT 600B9R1BT250XT 600B8R2BT250

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev.

0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band,

MRF6S27015NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* RoHS Compliant

* In Ta