MRF6S18140HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S18140HR3, RF Power Field Effect Transistors

47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 9.1 pF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 12 Ω, 1/8 W Resistors 1.0 KΩ, 1/8 W Resistors 560 KΩ, 1/8 W Chip Resistors Part Numb

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev.

0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications.

Typical 2 - Carrier N - CDMA Performanc

MRF6S18140HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Designed for Lower Memory E