MRF6S18060MBR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S18060MBR1, RF Power Field Effect Transistors

6.8 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitor 1 pF 100B Chip Capacitors 10 μF Chip Capacitors (2220) 220 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number 100B6R8CW 100B1R5BW 100B1R8BW 100B1R0BW

Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1.

There are no form, fit or function changes with this part replacement.

N suffix added to part number to indicate transition to lead - free terminations.

Document Number: MRF6S18060 Rev.

2, 5/2006 RF Power Field Effect Transistors www.datasheet4u.com MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and

MRF6S18060MBR1 Features

* PECTRAL REGROWTH @ 600 kHz (dBc)

* 55

* 60

* 65 25_C

* 70

* 30_C

* 75

* 80

* 85 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz TC = 85_C Figure 11. Spectral Regrowth at 400 kHz versus Output Power