MMG3012NT1 Datasheet - Freescale Semiconductor

MMG3012NT1 Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 *A114) Machine Model (per EIA/JESD 22 *A115) Charge Device Model (per JESD 22 *C101) Table 7. Moisture Sensitivity Level Test Met.

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small

MMG3012NT1 Features

* Frequency: 0

* 6000 MHz

* P1dB: 18.5 dBm @ 900 MHz

* Small

* Signal Gain: 19 dB @ 900 MHz

* Third Order Output Intercept Point: 34 dBm @ 900 MHz

* Single 5 V Supply

* Internally Matched to 50 Ohms

* Cost

* effective SOT

* 89 Surface Mount Plastic

MMG3012NT1 Datasheet (362.18 KB)

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Datasheet Details

Part number:

MMG3012NT1

Manufacturer:

Freescale Semiconductor

File Size:

362.18 KB

Description:

Heterojunction bipolar transistor.

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MMG3012NT1 Heterojunction Bipolar Transistor Freescale Semiconductor

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