NDH854P - P-Channel MOSFET

Fairchild

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Datasheet Details

Part number	NDH854P
Manufacturer	Fairchild ↗
File Size	85.87 KB
Description	P-Channel MOSFET
Datasheet	NDH854P_FairchildSemiconductor.pdf

NDH854P Product details

Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-5.1 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.052 Ω @ VGS = -4.5V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate.

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Published: May 12, 2005 |