NDH8503N - Dual N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDH8503N
Manufacturer	Fairchild
File Size	70.86 KB
Description	Dual N-Channel MOSFET
Datasheet	NDH8503N_FairchildSemiconductor.pdf

SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol VDSS VGSS ID PD TJ,.

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Published: May 12, 2005 |