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NDH853N - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 1997 NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. Features 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON).