NDH853N - N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDH853N
Manufacturer	Fairchild ↗
File Size	82.65 KB
Description	N-Channel MOSFET
Datasheet	NDH853N_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -.

📁 NDH853N Similar Datasheet

Other Datasheets by Fairchild

Published: May 12, 2005 |