NDH8504P - Dual P-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDH8504P
Manufacturer	Fairchild ↗
File Size	210.78 KB
Description	Dual P-Channel MOSFET
Datasheet	NDH8504P_FairchildSemiconductor.pdf

SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD.

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Published: May 12, 2005 |