SSH8N90A Datasheet - Fairchild Semiconductor

SSH8N90A, Advanced Power MOSFET

Advanced Power MOSFET SSH8N90A

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 900V Low RDS(ON) : 1.247 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

SSH8N90A-FairchildSemiconductor.pdf