IRFW820A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 500V
* Lower RDS(ON): 2.000Ω (Typ.) IRFW/I820A BVDSS = 50
IRFI820A_FairchildSemiconductor.pdf
Datasheet Details
IRFW820A, IRFI820A
Fairchild Semiconductor
255.23 KB
Advanced power mosfet.
This datasheet PDF includes multiple part numbers: IRFW820A, IRFI820A.
Please refer to the document for exact specifications by model.
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IRFW820A Distributor
