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IRFWZ24A, IRFIZ24A Power MOSFET

IRFWZ24A Description

Advanced Power MOSFET IRFW/IZ24A .

IRFWZ24A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR

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This datasheet PDF includes multiple part numbers: IRFWZ24A, IRFIZ24A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFWZ24A, IRFIZ24A
Manufacturer
Samsung
File Size
208.25 KB
Datasheet
IRFIZ24A-Samsung.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFWZ24A, IRFIZ24A.
Please refer to the document for exact specifications by model.

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Power MOSFET Samsung
Samsung IRFWZ24A-like datasheet