Datasheet4U Logo Datasheet4U.com

IRFW550A, IRFI550A (IRFI550A / IRFW550A) Advanced Power MOSFET

IRFW550A Description

www.DataSheet4U.com Advanced Power MOSFET .

IRFW550A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PA

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFW550A, IRFI550A. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRFW550A, IRFI550A
Manufacturer
Fairchild Semiconductor
File Size
292.98 KB
Datasheet
IRFI550A_FairchildSemiconductor.pdf
Description
(IRFI550A / IRFW550A) Advanced Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFW550A, IRFI550A.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFW610A - Power MOSFET (Samsung)
  • IRFW630A - Power MOSFET (Samsung)
  • IRFW630B - N-Channel MOSFET (ON Semiconductor)
  • IRFW720A - Power MOSFET (Samsung)
  • IRFW730A - Power MOSFET (Samsung)
  • IRFW830A - Power MOSFET (Samsung)
  • IRFWZ24A - Power MOSFET (Samsung)

📌 All Tags

Fairchild Semiconductor IRFW550A-like datasheet