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IRFW654B N-Channel MOSFET

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Description

IRFW654B / IRFI654B November 2001 IRFW654B / IRFI654B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Features

* 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
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* G! G S D2-PAK IRFW Series G D S I2-PAK IRFI

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