IRFW644A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 250V
* Lower RDS(ON): 0.214Ω (Typ.) IRFW/I644A BVDSS = 25
IRFI644A_FairchildSemiconductor.pdf
Datasheet Details
IRFW644A, IRFI644A
Fairchild Semiconductor
255.40 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRFW644A, IRFI644A.
Please refer to the document for exact specifications by model.
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IRFW644A Distributor
