IRFW640A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Ch
IRFI640A-FairchildSemiconductor.pdf
Datasheet Details
IRFW640A, IRFI640A
Fairchild Semiconductor
263.75 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRFW640A, IRFI640A.
Please refer to the document for exact specifications by model.
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IRFW640A Distributor
