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FQA24N50F - 500V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V Low gate charge ( typical 90 nC) Low Crss ( typical 55 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C.

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Part Number Description
FQA24N50 500V N-Channel MOSFET
FQA24N60 600V N-Channel MOSFET
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Full PDF Text Transcription

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FQA24N50F September 2001 FRFET FQA24N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology. TM Features • • • • • • • 24A, 500V, RDS(on) = 0.
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