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FDW262P 20V P-Channel PowerTrench MOSFET

FDW262P Description

FDW262P June 2001 FDW262P 20V P-Channel PowerTrench MOSFET General .
This P-Channel 1.

FDW262P Features

* 4.5 A,
* 20 V. RDS(ON) = 47 mΩ @ VGS =
* 4.5 V RDS(ON) = 65 mΩ @ VGS =
* 2.5 V RDS(ON) = 100 mΩ @ VGS =
* 1.8 V
* RDS(ON) rated for use with 1.8 V logic
* Low gate charge (13nC typical)
* High performance trench technology for ex

FDW262P Applications

* Power management
* Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain
* Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter

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Datasheet Details

Part number
FDW262P
Manufacturer
Fairchild Semiconductor
File Size
87.82 KB
Datasheet
FDW262P_FairchildSemiconductor.pdf
Description
20V P-Channel PowerTrench MOSFET

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20V P-Channel PowerTrench MOSFET Fairchild Semiconductor
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