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FDW2501N - Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V.
  • Extended VGSS range (±12V) for battery.

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FDW2501N May 2000 PRELIMINARY FDW2501N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V • Extended VGSS range (±12V) for battery applications.