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FDW2502PZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Features

  • 4.4 A,.
  • 20 V. RDS(ON) = 0.035 Ω @ V GS =.
  • 4.5 V RDS(ON) = 0.057 Ω @ V GS =.
  • 2.5 V.
  • Extended V GSS range (±12V) for battery.

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FDW2502PZ March 2000 PRELIMINARY FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ V GS = –4.5 V RDS(ON) = 0.057 Ω @ V GS = –2.5 V. • Extended V GSS range (±12V) for battery applications. • ESD protection diode (note 3). • High performance trench technology for extremely low RDS(ON) . • Low profile TSSOP-8 package.
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