FDW2601NZ Datasheet (Fairchild Semiconductor) - Dual N-Channel 2.5V Specified PowerTrench MOSFET

FDW2601NZ, Dual N-Channel 2.5V Specified PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics application

FDW2601NZ Features

* ! 8.2A, 30V rDS(ON) = 0.015Ω, VGS = 4.5V rDS(ON) = 0.020Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! B