FDS6699S Datasheet (Fairchild Semiconductor)

FDS6699S, MOSFET

The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efﬁciency, providing a low RDS(ON) and low gate charge.

The FDS6699S includes an integrated Schottky diode using Fairchild’s monol

FDS6699S Features

* 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V

* Includes SyncFET Schottky body diode

* High performance trench technology for extremely low RDS(ON) and fast switching

* High power and current handling capability

* 100% RG (Gate Resistance) test