FDS6675 - Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS6675
Manufacturer	Fairchild Semiconductor
File Size	247.46 KB
Description	Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET
Datasheet	FDS6675_FairchildSemiconductor.pdf

FDS6675 Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 S FD 75 66 pin 1 6 G 7 8 SO-8 S S S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS6675 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain C.

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Published: Mar 30, 2005 |