Datasheet4U Logo Datasheet4U.com

FDS6675BZ - P-Channel PowerTrench MOSFET

Key Features

  • This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6675BZ P-Channel MOSFET On Semiconductor
FDS6675 P-Channel MOSFET ON Semiconductor
FDS6673BZ P-Channel MOSFET ON Semiconductor
FDS6673BZ-F085 P-Channel MOSFET ON Semiconductor
FDS6676AS N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS6675 Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET
FDS6675A 30V P-Channel PowerTrench MOSFET
FDS6670A N-Channel MOSFET
FDS6670AS 30V N-Channel MOSFET
FDS6670S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A „ Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 5.