FDS6673BZ Datasheet (Fairchild Semiconductor)

FDS6673BZ, P-Channel MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac

FDS6673BZ Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A

* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

* Extended VGS range (-25V) for battery applications

* HBM ESD protection level of 6.5kV typical (note 3)

* High performance trench technology for extremely low rDS(on)