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FDS4885C - Dual N & P-Channel PowerTrench MOSFET

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V.
  • Q2: P-Channel RDS(on) = 31mΩ @ VGS =.
  • 10V RDS(on) = 42mΩ @ VGS =.
  • 4.5V.
  • Fast switching speed High power and handling capability in a widely used surface mount package 7.5A, 40V.
  • 6A,.
  • 40V.

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www.DataSheet4U.com FDS4885C January 2005 FDS4885C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V • Q2: P-Channel RDS(on) = 31mΩ @ VGS = –10V RDS(on) = 42mΩ @ VGS = –4.5V • • Fast switching speed High power and handling capability in a widely used surface mount package 7.
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