FDS4435A
Description
This P- Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge superior switching performance.
These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
- - 9 A,
- 30 V. RDS(ON) = 0.017 W @ VGS =
- 10 V
RDS(ON) = 0.025 W @ VGS =
- 4.5 V
- Low Gate Charge (21 n C Typical).
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb- Free and Ro HS pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
Drain- Source Voltage
- 30
VGSS Gate- Source Voltage
±20
Drain Current
- Continuous (Note 1a)
- 9
- Pulsed
- 50
Power Dissipation
(Note 1a)
W for Single Operation
(Note...
