FDS4435BZ-F085
Features
- Max r DS(on) = 20m: at VGS = -10V, ID = -8.8A
- Max r DS(on) = 35m: at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8KV typical (note 3)
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability
- Termination is Lead-free and Ro HS pliant Qualified to AEC Q101
General Description
This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Pin 1 SO-8
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
EAS TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Pulsed
TA = 25°C
Power Dissipation Power Dissipation Single...
